VBMB2205M is a single P-type Trench technology MOSFET launched by the VBsemi brand, with a TO220F package. The following is the detailed parameter description and application introduction of this product:

Parameter Description:
- Rated drain-source voltage (VDS): -200V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (mΩ) when gate-source voltage is 4.5V: 600mΩ
- Drain-source resistance (mΩ) when gate-source voltage is 10V: 500mΩ
- Quiescent drain current (ID): -10A

Application introduction:
VBMB2205M is suitable for various fields and modules that require high-performance power switches. Its characteristics of high drain-source voltage and low drain-source resistance make it widely used in the following fields and modules:
1. Power management module: VBMB2205M can be used to develop power management modules with stable power supply and high-efficiency conversion, such as switching power supplies, DC-DC converters, etc.
2. Electric vehicle charger: This MOSFET can be used in electric vehicle chargers to provide efficient charging performance and stable current output.
3. Industrial automation equipment: Suitable for power switch modules in various industrial automation equipment, such as frequency converters, servo drives, etc., to achieve high performance and reliability.
4. Solar inverter: VBMB2205M can be used in solar inverters to provide efficient power conversion and stable output power.

From the above introduction, it can be seen that VBMB2205M is suitable for many application scenarios that require high-performance power switches, including power management, electric vehicle chargers, industrial automation, solar inverters and other fields and modules.