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10N62K3-VB TO220F Product details
Back to previous pageProduct introduction：
### Product Introduction
**10N62K3-VB MOSFET** is a single N-channel MOSFET in TO220F package. It has a drain-source voltage (VDS) of up to 650V and operates at a gate-source voltage (VGS) of plus or minus 30V. The threshold voltage (Vth) of this MOSFET is 3.5V, the drain-source on-resistance (RDS(ON)) is 680mΩ (at VGS=10V), and the drain current (ID) is 12A. Manufactured with Plannar technology, it is suitable for various fields and modules.
**10N62K3-VB MOSFET** is a single N-channel MOSFET in TO220F package. It has a drain-source voltage (VDS) of up to 650V and operates at a gate-source voltage (VGS) of plus or minus 30V. The threshold voltage (Vth) of this MOSFET is 3.5V, the drain-source on-resistance (RDS(ON)) is 680mΩ (at VGS=10V), and the drain current (ID) is 12A. Manufactured with Plannar technology, it is suitable for various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter Description
- **Package Type: ** TO220F
- **Device Type: ** Single N-Channel
- **VDS (Drain-Source Voltage): ** 650V
- **VGS (Gate-Source Voltage): ** ±30V
- **Vth (Threshold Voltage): ** 3.5V
- **RDS(ON) (Drain-Source On-Resistance): ** 680mΩ @ VGS=10V
- **ID (Drain Current): ** 12A
- **Technology: ** Plannar
- **Package Type: ** TO220F
- **Device Type: ** Single N-Channel
- **VDS (Drain-Source Voltage): ** 650V
- **VGS (Gate-Source Voltage): ** ±30V
- **Vth (Threshold Voltage): ** 3.5V
- **RDS(ON) (Drain-Source On-Resistance): ** 680mΩ @ VGS=10V
- **ID (Drain Current): ** 12A
- **Technology: ** Plannar
Domain and module applications：
### Applications and Module Examples
1. **Industrial Automation:** 10N62K3-VB can be used in switching power supplies and inverter modules in industrial power systems to achieve high-efficiency power conversion.
2. **Electric Vehicle Charging Pile:** In electric vehicle charging piles, this MOSFET can be used as a switching device to control the power conversion and charging process of the charging pile.
3. **Solar Inverter:** Due to its high drain-source voltage and low on-resistance, it is suitable for DC-AC converter modules in solar inverters to improve energy conversion efficiency.
4. **Power Management:** In various power management modules, such as DC-DC converters and AC-DC converters, it can be used to improve power conversion efficiency and stability.
5. **Power Transmission:** It can be used in switching power supply modules in high-voltage DC transmission systems to achieve high-efficiency power transmission and distribution.
The above is the product introduction, parameter description and application examples of 10N62K3-VB MOSFET in various fields and modules.
1. **Industrial Automation:** 10N62K3-VB can be used in switching power supplies and inverter modules in industrial power systems to achieve high-efficiency power conversion.
2. **Electric Vehicle Charging Pile:** In electric vehicle charging piles, this MOSFET can be used as a switching device to control the power conversion and charging process of the charging pile.
3. **Solar Inverter:** Due to its high drain-source voltage and low on-resistance, it is suitable for DC-AC converter modules in solar inverters to improve energy conversion efficiency.
4. **Power Management:** In various power management modules, such as DC-DC converters and AC-DC converters, it can be used to improve power conversion efficiency and stability.
5. **Power Transmission:** It can be used in switching power supply modules in high-voltage DC transmission systems to achieve high-efficiency power transmission and distribution.
The above is the product introduction, parameter description and application examples of 10N62K3-VB MOSFET in various fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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