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10N60W-VB Product details

Product introduction:

VBsemi's MOSFET product 10N60W-VB is a single N-channel MOSFET in TO3P package. Its main technical features include a reliable 600V drain-source voltage (VDS), a 30V gate-source voltage (VGS, ±V), and a gate threshold voltage (Vth) of 3.5V. At VGS=10V, its on-resistance (RDS(ON)) is 380mΩ and the rated drain current (ID) is 11A. This product uses SJ_Multi-EPI technology.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N-Channel 600V 3.5V 11A 380mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N-Channel SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N-Channel 600V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N-Channel 600V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N-Channel

Domain and module applications:

This MOSFET is suitable for many fields and modules. For example, in the power supply field, it can be used in applications such as switching power supplies, inverters, and chargers. In the industrial control field, it can be used in motor drivers and automation control systems. In the lighting field, it can be used for LED drivers and lighting control. In addition, in automotive electronics, it can be applied to electric vehicle charging piles and on-board electronic systems. In general, 10N60W-VB is suitable for various fields and modules that require high-performance, high-reliability power switches and controls.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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