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VBMB2201K Product details
Back to previous pageProduct introduction：
VBMB2201K is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The device is fabricated using trench technology
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -200V | 20（±V） | -2.5V | -7A | 1200 (mΩ) | 1000 (mΩ) | Trench |
- Rated drain-source voltage (VDS): -200V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2.5V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 1200m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 1000m次
- Maximum drain current (ID): -7A
Domain and module applications：
The device is packaged in TO220F. The characteristics of being manufactured using groove technology make it perform well in a variety of applications. For example, in power electronic modules, VBMB2201K can be used in power management, motor drives, inverters and other fields. Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as in modules such as electric vehicle charging piles, solar inverters, and industrial inverters. In addition, its gating characteristics and low threshold voltage also make it an ideal choice for smart home products, such as smart light control modules, smart sockets, etc. The high performance and reliability of the VBMB2201K enable it to play an important role in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
