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10N10L-VB TO263 Product details
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10N10L-VB is a single N-channel MOSFET in TO263 package. It has a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, ±V) of 20V, and a threshold voltage (Vth) of 1.8V. At VGS=10V, its on-resistance (RDS(ON)) is 100mΩ and its maximum drain current (ID) is 20A. This MOSFET is manufactured using trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
The following are the detailed parameter descriptions of 10N10L-VB:
- **Package type (Package)**: TO263
- **Device type (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS, ±V)**: 20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
- **Package type (Package)**: TO263
- **Device type (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS, ±V)**: 20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Here are some examples of where this product is used and in which modules:
1. **Power modules**: Due to its high drain-source voltage and moderate on-resistance, the 10N10L-VB is suitable for power modules such as switching power supplies and converters.
2. **Electric vehicles**: In the electric drive system of electric vehicles, this MOSFET can be used as a key component of the inverter to achieve the conversion of battery power to motor drive.
3. **Industrial control**: In industrial control systems that require high power and high efficiency, the 10N10L-VB can be used as a switching device for motor control and power management.
4. **LED lighting**: In LED lighting systems that require high power and high brightness, this MOSFET can be used as a switching device in LED drivers.
These are just some examples. In fact, the 10N10L-VB can be used in a variety of application scenarios that require medium voltage, high current, and low on-resistance.
1. **Power modules**: Due to its high drain-source voltage and moderate on-resistance, the 10N10L-VB is suitable for power modules such as switching power supplies and converters.
2. **Electric vehicles**: In the electric drive system of electric vehicles, this MOSFET can be used as a key component of the inverter to achieve the conversion of battery power to motor drive.
3. **Industrial control**: In industrial control systems that require high power and high efficiency, the 10N10L-VB can be used as a switching device for motor control and power management.
4. **LED lighting**: In LED lighting systems that require high power and high brightness, this MOSFET can be used as a switching device in LED drivers.
These are just some examples. In fact, the 10N10L-VB can be used in a variety of application scenarios that require medium voltage, high current, and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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