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10N03LB-VB TO263 Product details
Back to previous pageProduct introduction：
10N03LB-VB is a single-channel N-channel MOSFET in TO263 package. It has the following main parameters:
- VDS (drain-source voltage): 30V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 1.7V
- RDS(ON) (on-resistance): 18mΩ at VGS=4.5V, 12mΩ at VGS=10V
- ID (drain current): 50A
- Technology: Trench technology
The product profile of this model is detailed as follows:
10N03LB-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO263 package makes it suitable for operation under various environmental conditions and has good heat dissipation performance. Through trench technology, the device features low on-resistance and moderate drain current, providing efficient power conversion and reliable performance.
- VDS (drain-source voltage): 30V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 1.7V
- RDS(ON) (on-resistance): 18mΩ at VGS=4.5V, 12mΩ at VGS=10V
- ID (drain current): 50A
- Technology: Trench technology
The product profile of this model is detailed as follows:
10N03LB-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO263 package makes it suitable for operation under various environmental conditions and has good heat dissipation performance. Through trench technology, the device features low on-resistance and moderate drain current, providing efficient power conversion and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | 18mΩ | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
The following are the detailed parameter descriptions of this model:
1. **VDS (Drain-Source Voltage)**: 30V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (Gate-Source Voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (Threshold Voltage)**: 1.7V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (On-Resistance)**: 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (Drain Current)**: 50A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, which uses advanced channel design to make the device have lower on-resistance and moderate drain current.
1. **VDS (Drain-Source Voltage)**: 30V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (Gate-Source Voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (Threshold Voltage)**: 1.7V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (On-Resistance)**: 18mΩ at VGS=4.5V and 12mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (Drain Current)**: 50A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, which uses advanced channel design to make the device have lower on-resistance and moderate drain current.
Domain and module applications：
This product is suitable for the following fields and modules:
- **Power management module**: Due to its moderate drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules with small and medium power.
- **Consumer electronics**: It can be used for modules such as mobile phone charging management and battery management to provide efficient power conversion.
- **Automotive electronics**: It is suitable for power management, motor drive and other modules in automotive electronic systems to provide reliable power control.
Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
- **Power management module**: Due to its moderate drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules with small and medium power.
- **Consumer electronics**: It can be used for modules such as mobile phone charging management and battery management to provide efficient power conversion.
- **Automotive electronics**: It is suitable for power management, motor drive and other modules in automotive electronic systems to provide reliable power control.
Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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