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109N04UJ-VB Product details
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### 109N04UJ-VB Product Introduction:
109N04UJ-VB is a single-channel N-channel MOSFET packaged in TO263. The device has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS, maximum) of 20V, and a threshold voltage (Vth) of 3V. It uses a trench process and has low on-resistance and excellent performance.
109N04UJ-VB is a single-channel N-channel MOSFET packaged in TO263. The device has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS, maximum) of 20V, and a threshold voltage (Vth) of 3V. It uses a trench process and has low on-resistance and excellent performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | 2.5mΩ | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### 109N04UJ-VB Detailed parameter description:
- **Package: ** TO263
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** 20V (±)
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 2.5mΩ @ VGS=4.5V, 2mΩ @ VGS=10V
- **Drain current (ID): ** 150A
- **Process: ** Trench process
- **Package: ** TO263
- **Channel type: ** Single N-channel
- **Drain-source voltage (VDS): ** 40V
- **Gate-source voltage (VGS): ** 20V (±)
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): ** 2.5mΩ @ VGS=4.5V, 2mΩ @ VGS=10V
- **Drain current (ID): ** 150A
- **Process: ** Trench process
Domain and module applications：
### Application fields and module examples:
1. **Power module:** Due to its high drain-source voltage and low on-resistance, it is suitable for high-power switch control in switching power supplies and inverter modules.
2. **Electric vehicle charging pile:** It can be used for switch controllers in electric vehicle charging piles to achieve high-efficiency charging.
3. **Industrial automation:** It is suitable for switch control in industrial automation systems, such as industrial robots and automated production lines.
4. **Battery management:** It can be used for battery protection circuits and battery charge and discharge control to achieve high efficiency and safety.
The above are just a few examples, and 109N04UJ-VB may also have a wide range of applications in other fields and modules.
1. **Power module:** Due to its high drain-source voltage and low on-resistance, it is suitable for high-power switch control in switching power supplies and inverter modules.
2. **Electric vehicle charging pile:** It can be used for switch controllers in electric vehicle charging piles to achieve high-efficiency charging.
3. **Industrial automation:** It is suitable for switch control in industrial automation systems, such as industrial robots and automated production lines.
4. **Battery management:** It can be used for battery protection circuits and battery charge and discharge control to achieve high efficiency and safety.
The above are just a few examples, and 109N04UJ-VB may also have a wide range of applications in other fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
