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VBMB2104N Product details

Product introduction:

VBMB2104N is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The device is fabricated using trench technology. The device is packaged in TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-P -100V 20(±V) -2V -50A 37 (mΩ) 33 (mΩ) Trench
Has the following main parameters:

- Rated drain-source voltage (VDS): -100V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 37m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 33m次
- Maximum drain current (ID): -50A

Domain and module applications:



The application of groove technology provides excellent performance in a variety of applications.
For example, in power modules, VBMB2104N can be used in switching power supplies, battery management systems and other fields. Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as electric vehicle control modules and motor drive modules in industrial machinery. In addition, its high threshold voltage and large drain current rating also make it an ideal choice for solar inverters, power adapters, etc. The high performance and reliability of the VBMB2104N enable it to play an important role in a variety of industrial and consumer electronics applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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