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100N08N-VB TO262 Product details
Back to previous pageProduct introduction：
100N08N-VB is a single-channel N-channel MOSFET in TO262 package. It has the following main parameters:
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 10mΩ at VGS=4.5V, 6mΩ at VGS=10V
- ID (drain current): 85A
- Technology: Trench technology
The product profile of this model is detailed as follows:
100N08N-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO262 package makes it suitable for operation under various environmental conditions and has good heat dissipation performance. Through trench technology, the device features low on-resistance and high drain current, providing efficient power conversion and reliable performance.
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 10mΩ at VGS=4.5V, 6mΩ at VGS=10V
- ID (drain current): 85A
- Technology: Trench technology
The product profile of this model is detailed as follows:
100N08N-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO262 package makes it suitable for operation under various environmental conditions and has good heat dissipation performance. Through trench technology, the device features low on-resistance and high drain current, providing efficient power conversion and reliable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 80V | 3V | 85A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel |
The following are the detailed parameter descriptions of this model:
1. **VDS (drain-source voltage)**: 80V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (gate-source voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (threshold voltage)**: 3V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (on-resistance)**: 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (drain current)**: 85A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, using advanced channel design, so that the device has lower on-resistance and higher efficiency.
1. **VDS (drain-source voltage)**: 80V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (gate-source voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (threshold voltage)**: 3V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (on-resistance)**: 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (drain current)**: 85A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, using advanced channel design, so that the device has lower on-resistance and higher efficiency.
Domain and module applications：
This product is suitable for the following fields and modules:
- **Power management module**: Due to its high drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules.
- **Electric vehicle**: It can be used in modules such as battery management systems and motor drive systems of electric vehicles to provide efficient power conversion.
- **Industrial control**: It is suitable for switch circuits, motor drives and other modules in various industrial control systems to provide reliable power control.
Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
- **Power management module**: Due to its high drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules.
- **Electric vehicle**: It can be used in modules such as battery management systems and motor drive systems of electric vehicles to provide efficient power conversion.
- **Industrial control**: It is suitable for switch circuits, motor drives and other modules in various industrial control systems to provide reliable power control.
Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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