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09N65GX-VB Product details
Back to previous pageProduct introduction：
09N65GX-VB is a single N-channel MOSFET in TO220F package, with 650V drain-source voltage (VDS), 30V gate-source voltage (VGS, ±), and 3.5V threshold voltage (Vth). Its on-resistance RDS(ON) is 830mΩ at VGS=10V, and the maximum drain current ID is 10A. It is manufactured using planar technology (Plannar).
Product Introduction:
09N65GX-VB is a high-performance single N-channel MOSFET with high drain-source voltage and moderate on-resistance, suitable for applications requiring medium power and reliability. Its TO220F package design makes it easy to install and dissipate heat, and is widely used in various fields and modules.
Product Introduction:
09N65GX-VB is a high-performance single N-channel MOSFET with high drain-source voltage and moderate on-resistance, suitable for applications requiring medium power and reliability. Its TO220F package design makes it easy to install and dissipate heat, and is widely used in various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
Detailed parameter description:
- Package: TO220F
- Structure: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±)
- Threshold voltage (Vth): 3.5V
- RDS(ON) (on-resistance): 830mΩ @ VGS=10V
- Maximum drain current (ID): 10A
- Process technology: Plannar
- Package: TO220F
- Structure: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±)
- Threshold voltage (Vth): 3.5V
- RDS(ON) (on-resistance): 830mΩ @ VGS=10V
- Maximum drain current (ID): 10A
- Process technology: Plannar
Domain and module applications：
Application examples:
1. Power modules: for medium power switching power supplies and inverters.
2. Lighting applications: for LED drivers and electronic ballasts.
3. Industrial control: for power switches in industrial automation and mechanical equipment control.
4. Automotive electronics: for power management and drive control in automotive electronic systems.
These examples show that the 09N65GX-VB is suitable for a variety of application fields and modules that require medium voltage and current drive.
1. Power modules: for medium power switching power supplies and inverters.
2. Lighting applications: for LED drivers and electronic ballasts.
3. Industrial control: for power switches in industrial automation and mechanical equipment control.
4. Automotive electronics: for power management and drive control in automotive electronic systems.
These examples show that the 09N65GX-VB is suitable for a variety of application fields and modules that require medium voltage and current drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
