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09N20H-LF-VB Product details
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09N20H-LF-VB is a single N-channel MOSFET in a TO252 package. Its main features include a drain-source voltage (VDS) of 200V, a gate-source voltage (VGS, positive and negative) of 20V, a threshold voltage (Vth) of 3V, an on-resistance of 245mΩ (RDS(ON)) at VGS=10V, and a drain current (ID) of 10A. This product is manufactured using trench technology.
**Product Introduction**
09N20H-LF-VB is a high-performance N-channel MOSFET suitable for applications requiring high voltage and medium current. Its high drain voltage and low on-resistance make it an ideal choice for high-efficiency power management and switching applications.
**Product Introduction**
09N20H-LF-VB is a high-performance N-channel MOSFET suitable for applications requiring high voltage and medium current. Its high drain voltage and low on-resistance make it an ideal choice for high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
**Detailed parameter description**
- Package: TO252
- Polarity: N-channel
- Drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 245mΩ @ VGS=10V
- Drain current (ID): 10A
- Technology: Trench
- Package: TO252
- Polarity: N-channel
- Drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 245mΩ @ VGS=10V
- Drain current (ID): 10A
- Technology: Trench
Domain and module applications：
**Applicable fields and modules**
- Power management: 09N20H-LF-VB is suitable for power management that requires high voltage and medium current, such as industrial power supply, UPS, etc.
- Electric vehicles: In the drive system of electric vehicles, this MOSFET can be used as a switching element of the motor controller to achieve high-efficiency energy conversion.
- Solar inverter: In the solar inverter, 09N20H-LF-VB can be used as a key component of the inverter to achieve efficient conversion of solar power.
- Power inverter: For power inverters that require high efficiency, this MOSFET can be used as a switching tube of the inverter to achieve high-efficiency energy conversion.
These are just some examples. In fact, 09N20H-LF-VB can also be used in many other fields and modules, depending on the requirements of the application and the needs of the design.
- Power management: 09N20H-LF-VB is suitable for power management that requires high voltage and medium current, such as industrial power supply, UPS, etc.
- Electric vehicles: In the drive system of electric vehicles, this MOSFET can be used as a switching element of the motor controller to achieve high-efficiency energy conversion.
- Solar inverter: In the solar inverter, 09N20H-LF-VB can be used as a key component of the inverter to achieve efficient conversion of solar power.
- Power inverter: For power inverters that require high efficiency, this MOSFET can be used as a switching tube of the inverter to achieve high-efficiency energy conversion.
These are just some examples. In fact, 09N20H-LF-VB can also be used in many other fields and modules, depending on the requirements of the application and the needs of the design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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