VBMB19R15S Product details
Product introduction:
VBsemi's VBMB19R15S model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 900V, a drain current (ID) of 15A, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO220F. This MOSFET is suitable for high-voltage and high-power application scenarios and has low on-resistance and high drain current tolerance.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 30(±V) | 3.5V | 15A | 370(mΩ) | SJ_Multi-EPI |
- Product model: VBMB19R15S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 370
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
Examples of application areas:
1. Industrial power supply system: VBMB19R15S can be used as a switching power supply module in industrial power supply systems to provide stable high-voltage power output and is suitable for mechanical equipment, manufacturing and other fields.
2. Electric vehicle charging piles: In electric vehicle charging piles, they need to withstand higher voltages and currents. VBMB19R15S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In solar inverters, high-efficiency power switching devices are required to realize the conversion and output of solar energy. The high voltage and current characteristics of VBMB19R15S make it an ideal choice for inverter modules.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image