中文
English
093N06N-VB TO220F Product details
Back to previous pageProduct introduction：
093N06N-VB is a single-channel N-channel MOSFET in TO220F package. It has the following main parameters:
- VDS (drain-source voltage): 60V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 13mΩ at VGS=4.5V, 5mΩ at VGS=10V
- ID (drain current): 120A
- Technology: Trench technology
The product profile of this model is detailed as follows:
093N06N-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO220F package makes it easy to install and dissipate heat, suitable for working under various environmental conditions. Through trench technology, the device features low on-resistance and high drain current, providing efficient power conversion and reliable performance.
- VDS (drain-source voltage): 60V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 13mΩ at VGS=4.5V, 5mΩ at VGS=10V
- ID (drain current): 120A
- Technology: Trench technology
The product profile of this model is detailed as follows:
093N06N-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO220F package makes it easy to install and dissipate heat, suitable for working under various environmental conditions. Through trench technology, the device features low on-resistance and high drain current, providing efficient power conversion and reliable performance.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 3V | 120A | 13mΩ | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 60V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
The following are the detailed parameter descriptions of this model:
1. **VDS (drain-source voltage)**: 60V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (gate-source voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (threshold voltage)**: 3V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (on-resistance)**: 13mΩ at VGS=4.5V and 5mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (drain current)**: 120A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, which uses advanced channel design to make the device have lower on-resistance and higher efficiency.
1. **VDS (drain-source voltage)**: 60V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (gate-source voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (threshold voltage)**: 3V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (on-resistance)**: 13mΩ at VGS=4.5V and 5mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (drain current)**: 120A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, which uses advanced channel design to make the device have lower on-resistance and higher efficiency.
Domain and module applications：
This product is suitable for the following fields and modules:
- **Power management module**: Due to its high drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules.
- **Electric vehicle**: It can be used in modules such as battery management systems and motor drive systems of electric vehicles to provide efficient power conversion.
- **Industrial control**: It is suitable for switch circuits, motor drives and other modules in various industrial control systems to provide reliable power control.
Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
- **Power management module**: Due to its high drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules.
- **Electric vehicle**: It can be used in modules such as battery management systems and motor drive systems of electric vehicles to provide efficient power conversion.
- **Industrial control**: It is suitable for switch circuits, motor drives and other modules in various industrial control systems to provide reliable power control.
Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
