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091N06N-VB TO263 Product details
Back to previous pageProduct introduction：
091N06N-VB is a single N-channel MOSFET in TO263 package, with 60V drain-source voltage (VDS), 20V gate-source voltage (VGS, ±), and 3V threshold voltage (Vth). Its on-resistance RDS(ON) is 4mΩ at VGS=10V, and the maximum drain current ID is 150A. It is manufactured using trench technology.
Product Introduction:
091N06N-VB is a high-performance single N-channel MOSFET with high drain-source voltage and on-resistance capability, suitable for applications requiring high power and high reliability. Its TO263 package design makes it suitable for high-power applications, and has good heat dissipation performance, and is widely used in various fields and modules.
Product Introduction:
091N06N-VB is a high-performance single N-channel MOSFET with high drain-source voltage and on-resistance capability, suitable for applications requiring high power and high reliability. Its TO263 package design makes it suitable for high-power applications, and has good heat dissipation performance, and is widely used in various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
Detailed parameter description:
- Package: TO263
- Structure: Single N-channel
- VDS (drain-source voltage): 60V
- VGS (gate-source voltage): 20V (±)
- Threshold voltage (Vth): 3V
- RDS(ON) (on-resistance): 4mΩ @ VGS=10V
- Maximum drain current (ID): 150A
- Process technology: Trench technology
- Package: TO263
- Structure: Single N-channel
- VDS (drain-source voltage): 60V
- VGS (gate-source voltage): 20V (±)
- Threshold voltage (Vth): 3V
- RDS(ON) (on-resistance): 4mΩ @ VGS=10V
- Maximum drain current (ID): 150A
- Process technology: Trench technology
Domain and module applications：
Application Examples:
1. Power Modules: For switching power supplies and inverters in high-power power systems.
2. Motor Drives: For industrial motor drives and motor control in electric vehicles (EVs).
3. Automotive Electronics: For power management and motor control in automotive electronic systems.
4. Industrial Controls: For power switches in factory automation and mechanical equipment control.
These examples show that the 091N06N-VB is suitable for a variety of high-power applications and modules that require high voltage and high current drive.
1. Power Modules: For switching power supplies and inverters in high-power power systems.
2. Motor Drives: For industrial motor drives and motor control in electric vehicles (EVs).
3. Automotive Electronics: For power management and motor control in automotive electronic systems.
4. Industrial Controls: For power switches in factory automation and mechanical equipment control.
These examples show that the 091N06N-VB is suitable for a variety of high-power applications and modules that require high voltage and high current drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
