VBMB19R11S Product details
Product introduction:
VBMB19R11S is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Using SJ_Multi-EPI technology, the package is TO220F. This product has high drain current and moderate on-resistance, making it suitable for a variety of high-voltage applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 900V | 30(±V) | 3.5V | 11A | 580 (mΩ) | SJ_Multi-EPI |
- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 580m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications:
1. Industrial high-voltage power supply module: Because VBMB19R11S has high drain current and high drain-source voltage, it is suitable for switching power supplies and DC-DC converters in industrial high-voltage power supply modules.
2. Solar inverter: It can be used in power switches and DC-AC converters in solar inverters to achieve effective utilization of solar energy.
3. Electric vehicle charging piles: In electric vehicle charging piles, it can be used for power switches and control circuits to achieve efficient and fast charging.
4. LED lighting: Suitable for power switching and dimming control in LED lighting applications, providing efficient lighting solutions.
Technical support:
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