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08P06P-VB TO263 Product details
Back to previous pageProduct introduction：
08P06P-VB is a single P-channel MOSFET in a TO263 package. Its main features include -60V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive and negative), -1.7V threshold voltage (Vth), 77mΩ on-resistance (RDS(ON)) at VGS=4.5V, 64mΩ on-resistance (RDS(ON)) at VGS=10V, and -30A drain current (ID). This product is manufactured using trench technology.
**Product Introduction**
08P06P-VB is a high-performance P-channel MOSFET suitable for applications requiring negative voltage and high current. Its low on-resistance and high drain current make it an ideal choice for high-efficiency power management and switching applications.
**Product Introduction**
08P06P-VB is a high-performance P-channel MOSFET suitable for applications requiring negative voltage and high current. Its low on-resistance and high drain current make it an ideal choice for high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -30A | 77mΩ | 64mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P-Channel |
**Detailed parameter description**
- Package: TO263
- Polarity: P-channel
- Drain-source voltage (VDS): -60V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): -1.7V
- On-resistance (RDS(ON)): 77mΩ @ VGS=4.5V, 64mΩ @ VGS=10V
- Drain current (ID): -30A
- Technology: Trench
Domain and module applications：
**Applicable fields and modules**
- Power management: 08P06P-VB is suitable for power management that requires negative voltage and high efficiency, such as battery management systems for electric vehicles.
- Inverter: In inverters that require negative voltage switches, this MOSFET can be used as a key component of the inverter.
- Power inverter: For power inverters that require high efficiency, 08P06P-VB can be used as a switch tube for the inverter.
- Battery protection: In situations where the battery needs to be protected, this MOSFET can be used in battery protection circuits.
These are just some examples. In fact, 08P06P-VB can also be used in many other fields and modules, depending on the requirements of the application and the needs of the design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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