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08N50-VB Product details
Back to previous pageProduct introduction：
08N50-VB is a single N-channel MOSFET in TO220F package, with 650V drain-source voltage (VDS), 30V gate-source voltage (VGS, ±), and 3.5V threshold voltage (Vth). Its on-resistance RDS(ON) is 680mΩ at VGS=10V, and the maximum drain current ID is 12A. It is manufactured using planar process (Plannar) technology.
Product Introduction:
08N50-VB is a high-performance single N-channel MOSFET with high drain-source voltage and drain current capability, suitable for applications requiring high reliability and high efficiency. Its TO220F package makes it easy to install and dissipate heat, and is widely used in various fields and modules.
Product Introduction:
08N50-VB is a high-performance single N-channel MOSFET with high drain-source voltage and drain current capability, suitable for applications requiring high reliability and high efficiency. Its TO220F package makes it easy to install and dissipate heat, and is widely used in various fields and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
Detailed parameter description:
- Package: TO220F
- Structure: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±)
- Threshold voltage (Vth): 3.5V
- RDS(ON) (on-resistance): 680mΩ @ VGS=10V
- Maximum drain current (ID): 12A
- Process technology: Plannar
- Package: TO220F
- Structure: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): 30V (±)
- Threshold voltage (Vth): 3.5V
- RDS(ON) (on-resistance): 680mΩ @ VGS=10V
- Maximum drain current (ID): 12A
- Process technology: Plannar
Domain and module applications：
Application examples:
1. Industrial: For switching power supplies, inverters and converters in industrial power systems.
2. Automotive electronics: For electric drive systems in electric vehicles (EV) and hybrid electric vehicles (HEV).
3. Power management: For efficient DC-DC converters and power switches.
4. Lighting applications: For LED drivers and electronic ballasts.
These examples show that the 08N50-VB is suitable for a variety of application fields and modules that require high voltage, high current and high efficiency.
1. Industrial: For switching power supplies, inverters and converters in industrial power systems.
2. Automotive electronics: For electric drive systems in electric vehicles (EV) and hybrid electric vehicles (HEV).
3. Power management: For efficient DC-DC converters and power switches.
4. Lighting applications: For LED drivers and electronic ballasts.
These examples show that the 08N50-VB is suitable for a variety of application fields and modules that require high voltage, high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
