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08N50E-VB Product details
Back to previous pageProduct introduction：
08N50E-VB is a single N-channel MOSFET in a TO220F package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, and a threshold voltage (Vth) of 3.5V. At VGS=10V, its on-resistance (RDS(ON)) is 680mΩ and its maximum drain current (ID) is 12A. This MOSFET is manufactured using planar technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
The following are the detailed parameter descriptions of 08N50E-VB:
- **Package type (Package)**: TO220F
- **Device type (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS, ±V)**: 30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Planar
- **Package type (Package)**: TO220F
- **Device type (Configuration)**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS, ±V)**: 30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Maximum drain current (ID)**: 12A
- **Technology**: Planar
Domain and module applications：
Here are some examples of what fields and modules this product is used for:
1. **Power supply modules**: Due to its high drain-source voltage and large drain current, the 08N50E-VB is suitable for power supply modules such as switching power supplies and converters.
2. **Electric vehicle charging piles**: Its high drain-source voltage and low on-resistance make it suitable for switching devices in electric vehicle charging piles.
3. **Solar inverter**: In solar power generation systems, this MOSFET can be used as a key component of the inverter to convert DC to AC.
4. **Motor drive**: For motor drives that require high voltage and high current, the 08N50E-VB is an ideal choice for motor control in industrial and automotive applications.
These are just some examples. In fact, the 08N50E-VB can be used in a variety of application scenarios that require high voltage, high current and low on-resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
