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08N50C3-VB Product details
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08N50C3-VB is a single N-channel MOSFET in TO252 package. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, ±V) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 500mΩ at VGS=10V, and a maximum drain current (ID) of 9A. This product adopts SJ_Multi-EPI technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
Detailed parameter description is as follows:
- Product model: 08N50C3-VB
- Package: TO252
- Polarity: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30 (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 500mΩ @ VGS=10V
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
- Product model: 08N50C3-VB
- Package: TO252
- Polarity: Single N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30 (±V)
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 500mΩ @ VGS=10V
- Maximum drain current (ID): 9A
- Technology: SJ_Multi-EPI
Domain and module applications：
This product is suitable for the following fields and modules:
1. Industrial control field: used for power switch control of switching power supplies, inverters, UPS and other equipment.
2. Electric vehicle field: used for battery management systems, motor drivers and other modules of electric vehicles.
3. Solar inverter field: used for DC-AC conversion control of solar inverters.
4. Power management module: used for various power management modules, such as voltage regulators, switching power supplies, etc.
The above is an introduction to 08N50C3-VB MOSFET, detailed parameter description and paragraph examples of applicable fields and modules.
1. Industrial control field: used for power switch control of switching power supplies, inverters, UPS and other equipment.
2. Electric vehicle field: used for battery management systems, motor drivers and other modules of electric vehicles.
3. Solar inverter field: used for DC-AC conversion control of solar inverters.
4. Power management module: used for various power management modules, such as voltage regulators, switching power supplies, etc.
The above is an introduction to 08N50C3-VB MOSFET, detailed parameter description and paragraph examples of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
