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08CNE8N-VB TO263 Product details
Back to previous pageProduct introduction：
08CNE8N-VB is a single N-channel MOSFET in a TO263 package. Its main features include 80V drain-source voltage (VDS), 20V gate-source voltage (VGS, positive and negative), 3V threshold voltage (Vth), 10mΩ on-resistance (RDS(ON)) at VGS=4.5V, 6mΩ on-resistance (RDS(ON)) at VGS=10V, and 120A drain current (ID). This product is manufactured using trench technology.
**Product Introduction**
08CNE8N-VB is a high-performance MOSFET suitable for applications requiring high voltage and high current. Its low on-resistance and high drain current make it an ideal choice for high-efficiency power management and switching applications.
**Product Introduction**
08CNE8N-VB is a high-performance MOSFET suitable for applications requiring high voltage and high current. Its low on-resistance and high drain current make it an ideal choice for high-efficiency power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
**Detailed parameter description**
- Package: TO263
- Polarity: N-channel
- Drain-source voltage (VDS): 80V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- Drain current (ID): 120A
- Technology: Trench
- Package: TO263
- Polarity: N-channel
- Drain-source voltage (VDS): 80V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- Drain current (ID): 120A
- Technology: Trench
Domain and module applications：
**Applicable fields and modules**
- Power management: 08CNE8N-VB is suitable for applications that require high-efficiency power management, such as server power supplies, industrial power supplies, etc.
- Power tools: Due to its high drain current and low on-resistance, this product is also suitable for the drive circuit of power tools.
- Electric vehicles: In the electric drive system of electric vehicles, 08CNE8N-VB can be used as a switching element of the motor controller to achieve high-efficiency energy conversion.
- Lighting applications: This MOSFET is also a good choice for LED lighting applications that require dimming and high efficiency.
These are just some examples. In fact, 08CNE8N-VB can also be used in many other fields and modules, depending on the requirements of the application and the needs of the design.
- Power management: 08CNE8N-VB is suitable for applications that require high-efficiency power management, such as server power supplies, industrial power supplies, etc.
- Power tools: Due to its high drain current and low on-resistance, this product is also suitable for the drive circuit of power tools.
- Electric vehicles: In the electric drive system of electric vehicles, 08CNE8N-VB can be used as a switching element of the motor controller to achieve high-efficiency energy conversion.
- Lighting applications: This MOSFET is also a good choice for LED lighting applications that require dimming and high efficiency.
These are just some examples. In fact, 08CNE8N-VB can also be used in many other fields and modules, depending on the requirements of the application and the needs of the design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
