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08CNE8N-VB TO220 Product details

Product introduction:

08CNE8N-VB is a single-channel N-channel MOSFET in TO220 package. It has the following main parameters:

- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): ±20V
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 9mΩ at VGS=4.5V, 7mΩ at VGS=10V
- ID (drain current): 100A
- Technology: Trench technology

The product profile of this model is detailed as follows:

08CNE8N-VB is a high-performance N-channel MOSFET suitable for applications requiring high performance and high reliability. Its TO220 package makes it easy to install and dissipate heat, suitable for working under various environmental conditions. Through trench technology, the device features low on-resistance and high drain current, providing efficient power conversion and reliable performance.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N-Channel 80V 3V 100A 9mΩ 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N-Channel 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N-Channel 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N-Channel
The following are the detailed parameter descriptions of this model:

1. **VDS (drain-source voltage)**: 80V, indicating the maximum drain-source voltage that the device can withstand.
2. **VGS (gate-source voltage)**: ±20V, indicating the voltage range between the gate and the source.
3. **Vth (threshold voltage)**: 3V, indicating the voltage between the gate and the source, which makes the device start to conduct.
4. **RDS(ON) (on-resistance)**: 9mΩ at VGS=4.5V and 7mΩ at VGS=10V, indicating the resistance of the device when it is on, affecting the power loss.
5. **ID (drain current)**: 100A, indicating the maximum drain current that the device can withstand, directly affecting the power handling capability of the device.
6. **Technology**: Trench technology, using advanced channel design, so that the device has lower on-resistance and higher efficiency.

Domain and module applications:

This product is suitable for the following fields and modules:

- **Power Management Module**: Due to its high drain current and low on-resistance, it is suitable for power management modules such as power amplifiers and switch modules.
- **Industrial Automation**: It can be used in industrial automation fields such as control circuits and motor drives to provide reliable power conversion.
- **Electric Vehicle**: It is suitable for modules such as battery management systems and motor drive systems of electric vehicles to provide efficient power conversion.

Please note that the above are just some common application areas, and the specific application depends on the actual design requirements and environment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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