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07N60C2-VB TO251 Product details
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### 07N60C2-VB Product Introduction
**Model**: 07N60C2-VB
**Package**: TO251
**Configuration**: Single N-channel
**Technology**: SJ_Multi-EPI
07N60C2-VB is a high-voltage N-channel MOSFET with a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 7A. The device uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology to significantly reduce the on-resistance (RDS(ON)), enabling it to perform well in high-voltage applications. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable turn-on even at low gate drive voltages.
**Model**: 07N60C2-VB
**Package**: TO251
**Configuration**: Single N-channel
**Technology**: SJ_Multi-EPI
07N60C2-VB is a high-voltage N-channel MOSFET with a drain-source voltage (VDS) of 650V and a continuous drain current (ID) of 7A. The device uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology to significantly reduce the on-resistance (RDS(ON)), enabling it to perform well in high-voltage applications. Its gate threshold voltage (Vth) is 3.5V, ensuring reliable turn-on even at low gate drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N-Channel |
### 07N60C2-VB Parameter Description
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Continuous Drain Current (ID)**: 7A
- **Pulsed Drain Current (IDM)**: 28A
- **Power Dissipation (PD)**: 48W
- **Operating Temperature Range (Tj)**: -55°C ~ 150°C
- **Package Type**: TO251
- **Technology**: SJ_Multi-EPI
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 700mΩ @ VGS=10V
- **Continuous Drain Current (ID)**: 7A
- **Pulsed Drain Current (IDM)**: 28A
- **Power Dissipation (PD)**: 48W
- **Operating Temperature Range (Tj)**: -55°C ~ 150°C
- **Package Type**: TO251
- **Technology**: SJ_Multi-EPI
Domain and module applications：
### Applications and Module Examples
**Power Management**
07N60C2-VB MOSFET can be used in high-efficiency power management systems such as switch mode power supplies (SMPS) and inverters. Its high withstand voltage characteristics and low on-resistance enable it to effectively reduce power consumption and improve system efficiency under high-frequency operation.
**Motor Drive**
In motor drive applications, 07N60C2-VB is used as a switching element to provide stable current control, suitable for industrial motor controllers and servo drives.
**Lighting System**
This MOSFET is suitable for LED drive circuits, especially those that require high-voltage operation. It can improve the overall efficiency of the drive circuit and reduce heat loss.
**Industrial Automation**
In industrial automation equipment, 07N60C2-VB can be used in various control and drive modules such as PLC, inverter, etc., providing reliable high-voltage switching functions.
**Electric Vehicles**
07N60C2-VB is also widely used in charging modules and battery management systems (BMS) of electric vehicles (EV). Its high voltage and high current handling capabilities enable it to effectively manage the battery charging and discharging process, ensuring the stability and safety of the system.
Through the above application examples, it can be seen that 07N60C2-VB MOSFET can play a key role in various high-voltage and high-power circuits to improve the performance and efficiency of the system.
**Power Management**
07N60C2-VB MOSFET can be used in high-efficiency power management systems such as switch mode power supplies (SMPS) and inverters. Its high withstand voltage characteristics and low on-resistance enable it to effectively reduce power consumption and improve system efficiency under high-frequency operation.
**Motor Drive**
In motor drive applications, 07N60C2-VB is used as a switching element to provide stable current control, suitable for industrial motor controllers and servo drives.
**Lighting System**
This MOSFET is suitable for LED drive circuits, especially those that require high-voltage operation. It can improve the overall efficiency of the drive circuit and reduce heat loss.
**Industrial Automation**
In industrial automation equipment, 07N60C2-VB can be used in various control and drive modules such as PLC, inverter, etc., providing reliable high-voltage switching functions.
**Electric Vehicles**
07N60C2-VB is also widely used in charging modules and battery management systems (BMS) of electric vehicles (EV). Its high voltage and high current handling capabilities enable it to effectively manage the battery charging and discharging process, ensuring the stability and safety of the system.
Through the above application examples, it can be seen that 07N60C2-VB MOSFET can play a key role in various high-voltage and high-power circuits to improve the performance and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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