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VBMB195R03 Product details

Product introduction:

Product introduction:
VBMB195R03 is a Single N-type field effect transistor produced by VBsemi and is suitable for various electronic applications. With high voltage tolerance and stability, it can provide reliable performance in different application scenarios.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is 950V.
- VGS(±V): Gate-source voltage range is ±30V.
- Vth(V): Threshold voltage is 3.5V.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 5400 mΩ.
- ID (A): Maximum drain current is 3A.
- Technology: Using Plannar technology.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 950V 30(±V) 3.5V 3A 5400 (mΩ) Plannar
Product model: VBMB195R03
Brand: VBsemi
Parameters: Single N
VDS(V): 950
VGS(㊣V): 30
Vth(V): 3.5
VGS=10V(m次): 5400
ID(A): 3
Technology: Planner
Package: TO220F

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power supply: VBMB195R03 is suitable for switching power supplies and DC-DC converter modules in industrial power supplies to achieve high-efficiency power conversion.
2. Automotive electronics: In the field of automotive electronics, this model can be used in switching power supply modules in vehicle power management systems to provide stable power output.
3. Solar inverter: Due to its high voltage tolerance and stability, VBMB195R03 can be used as a power inverter module in a solar inverter to realize the conversion and output of solar energy.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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