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076N12N-VB TO262 Product details
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The following is detailed information about VBsemi's MOSFET product 076N12N-VB:
1. Product Introduction:
- Model: 076N12N-VB
- Package: TO262
- Construction: Single N-channel
- Rated drain-source voltage (VDS): 100V
- Rated gate-source voltage (VGS): 20V (±)
- Threshold voltage (Vth): 2.5V
- Static drain-source resistance (RDS(ON)): 10mΩ at VGS=4.5V, 9mΩ at VGS=10V
- Continuous drain current (ID): 100A
- Process: Trench
1. Product Introduction:
- Model: 076N12N-VB
- Package: TO262
- Construction: Single N-channel
- Rated drain-source voltage (VDS): 100V
- Rated gate-source voltage (VGS): 20V (±)
- Threshold voltage (Vth): 2.5V
- Static drain-source resistance (RDS(ON)): 10mΩ at VGS=4.5V, 9mΩ at VGS=10V
- Continuous drain current (ID): 100A
- Process: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 100V | 2.5V | 100A | 10mΩ | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel |
2. Parameter description:
- VDS: 100V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 2.5V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 2.5V, the MOSFET starts to turn on.
- RDS(ON): 10mΩ at VGS=4.5V and 9mΩ at VGS=10V, which means that the static drain-source resistance of the MOSFET is different at different gate voltages.
- ID: 100A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
- VDS: 100V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 2.5V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 2.5V, the MOSFET starts to turn on.
- RDS(ON): 10mΩ at VGS=4.5V and 9mΩ at VGS=10V, which means that the static drain-source resistance of the MOSFET is different at different gate voltages.
- ID: 100A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
Domain and module applications：
3. Application fields and module examples:
- Power modules: Due to its low drain-source resistance and high drain current capability, the 076N12N-VB is suitable for high-performance power modules such as server power supplies and communication equipment power supplies.
- Power tools: It can be used for power switching and current control in power tools, providing efficient power conversion and management due to its high current capability and low on-resistance.
- Medical equipment: Due to its high voltage and current capabilities, it is suitable for power management and switching control in medical equipment to ensure the stability and efficient operation of the equipment.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
- Power modules: Due to its low drain-source resistance and high drain current capability, the 076N12N-VB is suitable for high-performance power modules such as server power supplies and communication equipment power supplies.
- Power tools: It can be used for power switching and current control in power tools, providing efficient power conversion and management due to its high current capability and low on-resistance.
- Medical equipment: Due to its high voltage and current capabilities, it is suitable for power management and switching control in medical equipment to ensure the stability and efficient operation of the equipment.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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