中文
English
06N60E-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 06N60E-VB is a single N-channel field effect transistor (MOSFET) in a TO220F package. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, positive and negative values) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 1100mΩ@VGS=10V, and a drain current (ID) of 7A. It uses a planar process (Plannar Technology) and has good performance and reliability under high voltage.
VBsemi's 06N60E-VB is a single N-channel field effect transistor (MOSFET) in a TO220F package. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, positive and negative values) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 1100mΩ@VGS=10V, and a drain current (ID) of 7A. It uses a planar process (Plannar Technology) and has good performance and reliability under high voltage.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter description:
- Package: TO220F
- Type: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ±30V
- Threshold voltage (Vth): 3.5V
- RDS(ON): 1100mΩ@VGS=10V
- ID (drain current): 7A
- Process: planar process
- Package: TO220F
- Type: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ±30V
- Threshold voltage (Vth): 3.5V
- RDS(ON): 1100mΩ@VGS=10V
- ID (drain current): 7A
- Process: planar process
Domain and module applications：
### Applicable fields and modules:
- Power modules: Due to its high drain voltage and moderate on-resistance, 06N60E-VB is suitable for power modules such as switching power supplies, UPS systems and inverters, especially for applications that need to withstand high voltage.
- Automotive electronics: In the field of automotive electronics, due to its high voltage and moderate on-resistance, 06N60E-VB is often used in modules such as automotive power management modules, ignition systems and lighting systems to ensure the high performance and reliability of the vehicle.
- Industrial electronics: In the field of industrial control and automation, due to its high voltage resistance, 06N60E-VB is often used in high-voltage switches and control modules to ensure the stable operation of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
