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06N60C3-VB TO252 Product details
Back to previous pageProduct introduction：
The following is the detailed information of VBsemi's MOSFET product 06N60C3-VB:
1. Product Introduction:
06N60C3-VB is a single-N-Channel MOSFET manufactured using SJ_Multi-EPI technology, suitable for circuit design in various fields and modules. Its main features include 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 1000mΩ@VGS=10V on-resistance (RDS(ON)), and 5A drain current (ID).
1. Product Introduction:
06N60C3-VB is a single-N-Channel MOSFET manufactured using SJ_Multi-EPI technology, suitable for circuit design in various fields and modules. Its main features include 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 1000mΩ@VGS=10V on-resistance (RDS(ON)), and 5A drain current (ID).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
2. Parameter description:
- Model: 06N60C3-VB
- Package: TO252
- Polarity: N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 1000mΩ@VGS=10V
- Drain current (ID): 5A
- Technology: SJ_Multi-EPI
- Model: 06N60C3-VB
- Package: TO252
- Polarity: N-channel
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(ON)): 1000mΩ@VGS=10V
- Drain current (ID): 5A
- Technology: SJ_Multi-EPI
Domain and module applications：
3. Application examples:
06N60C3-VB is suitable for a variety of fields and modules, such as:
- Power management: Suitable for medium-power switching power supplies and voltage regulators.
- Motor drive: Used for motor control in industrial machinery, power tools and other fields.
- Automotive electronics: Suitable for power management and drive control in automotive electronic systems.
- LED lighting: Used for power switches in LED lighting systems.
The above is the detailed information of the 06N60C3-VB MOSFET product and examples of its applicable fields and modules.
06N60C3-VB is suitable for a variety of fields and modules, such as:
- Power management: Suitable for medium-power switching power supplies and voltage regulators.
- Motor drive: Used for motor control in industrial machinery, power tools and other fields.
- Automotive electronics: Suitable for power management and drive control in automotive electronic systems.
- LED lighting: Used for power switches in LED lighting systems.
The above is the detailed information of the 06N60C3-VB MOSFET product and examples of its applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
