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06CNE8N-VB TO263 Product details
Back to previous pageProduct introduction：
VBsemi's 06CNE8N-VB is a single N-channel MOSFET in a TO263 package. It has a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS) of 20V (±V), a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 10mΩ at VGS=4.5V, an on-resistance (RDS(ON)) of 6mΩ at VGS=10V, and a drain current (ID) of 120A. This product uses a Trench process.
**Product Introduction: **
VBsemi's 06CNE8N-VB is a high-performance single N-channel MOSFET suitable for a variety of fields and modules. It has the characteristics of high drain voltage, low on-resistance and strong reliability, and is suitable for applications requiring high power density and high efficiency.
**Product Introduction: **
VBsemi's 06CNE8N-VB is a high-performance single N-channel MOSFET suitable for a variety of fields and modules. It has the characteristics of high drain voltage, low on-resistance and strong reliability, and is suitable for applications requiring high power density and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
**Detailed parameter description:**
- Package: TO263
- Type: Single N-channel
- Drain-source voltage (VDS): 80V
- Gate-source voltage (VGS): 20V (±V)
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- Drain current (ID): 120A
- Process: Trench
- Package: TO263
- Type: Single N-channel
- Drain-source voltage (VDS): 80V
- Gate-source voltage (VGS): 20V (±V)
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- Drain current (ID): 120A
- Process: Trench
Domain and module applications：
**Application fields and module examples:**
1. **Power modules**: 06CNE8N-VB is suitable for medium and high power power modules, such as power tools, electric vehicle chargers, etc., with low on-resistance and high efficiency.
2. **Electric vehicles**: In the motor drive system of electric vehicles, 06CNE8N-VB can be used in controller modules to provide stable power output.
3. **Industrial control**: In the field of industrial control, 06CNE8N-VB is suitable for various types of motor controllers and power inverters, providing high efficiency and reliability.
4. **Power management**: In various power management systems, 06CNE8N-VB can be used as a power switch with high efficiency and stable performance.
5. **LED lighting**: In LED lighting systems, 06CNE8N-VB can be used as an LED driver, providing high-efficiency power conversion and stable current output.
These are some typical application scenarios of 06CNE8N-VB, but they are not limited to them. The specific application depends on the design requirements and environmental conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
