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06CN10N-VB TO263 Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 06CN10N-VB is a high-performance N-channel MOSFET in TO263 package. The device has an operating voltage (VDS) of 100V, a maximum allowable gate-source voltage (VGS) of 20V (absolute value), and a threshold voltage (Vth) of 3V. When VGS is 10V, the on-resistance (RDS(ON)) is 4mΩ and the maximum drain current (ID) is 140A. It uses Trench technology and has excellent performance and reliability.
VBsemi's 06CN10N-VB is a high-performance N-channel MOSFET in TO263 package. The device has an operating voltage (VDS) of 100V, a maximum allowable gate-source voltage (VGS) of 20V (absolute value), and a threshold voltage (Vth) of 3V. When VGS is 10V, the on-resistance (RDS(ON)) is 4mΩ and the maximum drain current (ID) is 140A. It uses Trench technology and has excellent performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description:
- **Package Type**: TO263
- **Channel Type**: Single N-channel
- **Operating Voltage (VDS)**: 100V
- **Maximum Allowable Gate-Source Voltage (VGS)**: 20V (absolute value)
- **Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 140A
- **Technology**: Trench
- **Package Type**: TO263
- **Channel Type**: Single N-channel
- **Operating Voltage (VDS)**: 100V
- **Maximum Allowable Gate-Source Voltage (VGS)**: 20V (absolute value)
- **Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 140A
- **Technology**: Trench
Domain and module applications：
### Applications and module examples:
1. **Power modules**: The 06CN10N-VB is suitable for high-power power modules such as switching power supplies and inverters, as its low on-resistance and high drain current capability enable it to effectively handle high-power applications.
2. **Electric vehicles**: In motor drives for electric vehicles, this MOSFET can be used in motor control and battery management systems, providing efficient energy conversion and high performance.
3. **Industrial control**: In industrial automation and control systems, this MOSFET can be used in a variety of high-power applications such as motor drives and inverters.
4. **Battery management**: In power tools and portable devices, this MOSFET can be used in battery charge and discharge controllers, ensuring efficient energy management and charging control.
These are just some examples, and the actual application depends on the specific design and system requirements.
1. **Power modules**: The 06CN10N-VB is suitable for high-power power modules such as switching power supplies and inverters, as its low on-resistance and high drain current capability enable it to effectively handle high-power applications.
2. **Electric vehicles**: In motor drives for electric vehicles, this MOSFET can be used in motor control and battery management systems, providing efficient energy conversion and high performance.
3. **Industrial control**: In industrial automation and control systems, this MOSFET can be used in a variety of high-power applications such as motor drives and inverters.
4. **Battery management**: In power tools and portable devices, this MOSFET can be used in battery charge and discharge controllers, ensuring efficient energy management and charging control.
These are just some examples, and the actual application depends on the specific design and system requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
