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067N08N-VB Product details
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**Product Introduction: **
VBsemi's 067N08N-VB is a single N-channel field effect transistor in a TO263 package. It has a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 3V, and an on-resistance (RDS(ON)) of 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, and can withstand a drain current (ID) of 120A. The product is manufactured using Trench Technology.
**Product Introduction: **
VBsemi's 067N08N-VB is a single N-channel field effect transistor in a TO263 package. It has a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, ±V) of 20V, a threshold voltage (Vth) of 3V, and an on-resistance (RDS(ON)) of 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, and can withstand a drain current (ID) of 120A. The product is manufactured using Trench Technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
**Detailed parameter description:**
- Package: TO263
- Configuration: Single N-channel
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): 20V (±V)
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- ID (drain current): 120A
- Technology: Trench technology
- Package: TO263
- Configuration: Single N-channel
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): 20V (±V)
- Vth (threshold voltage): 3V
- RDS(ON) (on-resistance): 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- ID (drain current): 120A
- Technology: Trench technology
Domain and module applications：
**Application fields and module examples:**
1. **Power module**: 067N08N-VB can be used as a power switch tube in a switching power supply to convert and regulate the power supply voltage.
2. **Motor drive**: Due to its low on-resistance and high drain current capability, the device can be used to drive DC motors with higher requirements.
3. **Lighting application**: In LED drive circuits, it can be used as a current regulator to provide reliable power control.
4. **Electric vehicle control**: Used in motor control and battery management systems in electric vehicles to provide efficient power switching.
5. **Industrial automation**: Can be used for power switches in industrial equipment and robots to ensure stable operation of the equipment.
The above is an introduction to the 067N08N-VB product, parameter description, and description of applicable fields and modules.
1. **Power module**: 067N08N-VB can be used as a power switch tube in a switching power supply to convert and regulate the power supply voltage.
2. **Motor drive**: Due to its low on-resistance and high drain current capability, the device can be used to drive DC motors with higher requirements.
3. **Lighting application**: In LED drive circuits, it can be used as a current regulator to provide reliable power control.
4. **Electric vehicle control**: Used in motor control and battery management systems in electric vehicles to provide efficient power switching.
5. **Industrial automation**: Can be used for power switches in industrial equipment and robots to ensure stable operation of the equipment.
The above is an introduction to the 067N08N-VB product, parameter description, and description of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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