Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
800V |
30（±V） |
3.5V |
15A |
|
|
370(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBMB18R15S
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 370 m次
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
VBMB18R15S MOSFET is suitable for a variety of fields and modules. The following are some typical application scenarios:
1. Electric vehicle power management: suitable for electric vehicle chargers, battery management systems, and motor drivers to achieve high-efficiency power management and power output control of electric vehicles.
2. Industrial power electronics: It can be used in frequency converters, power regulators and power factor correctors in industry to realize the control and regulation of power systems.
3. Solar inverter: used in inverters and power management modules in solar power generation systems to convert DC power collected by solar panels into AC power.
4. Power supply module: Can be applied to various power supply modules, such as switching power supplies, UPS systems and chargers, etc., to achieve stable and reliable power output.
5. LED lighting driver: suitable for drive circuits in LED lighting systems, used to adjust the brightness and color temperature of LED lights.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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