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05N50H-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
VBsemi's 05N50H-VB is a single N-channel power MOSFET using SJ_Multi-EPI technology, suitable for a variety of applications. The device has a high drain voltage, moderate on-resistance and current, and is suitable for applications such as power supplies, DC-DC converters, motor control, etc. that require medium power and high voltage.
VBsemi's 05N50H-VB is a single N-channel power MOSFET using SJ_Multi-EPI technology, suitable for a variety of applications. The device has a high drain voltage, moderate on-resistance and current, and is suitable for applications such as power supplies, DC-DC converters, motor control, etc. that require medium power and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N-Channel |
**Detailed parameter description:**
- **Model:** 05N50H-VB
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** 30V (±)
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1000mΩ @ VGS=10V
- **Drain current (ID):** 5A
- **Technology:** SJ_Multi-EPI
- **Model:** 05N50H-VB
- **Package:** TO252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 650V
- **Gate-source voltage (VGS):** 30V (±)
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 1000mΩ @ VGS=10V
- **Drain current (ID):** 5A
- **Technology:** SJ_Multi-EPI
Domain and module applications：
**Application Examples:**
- **Power Supplies:** This MOSFET can be used in medium power and high voltage switch mode power supplies to stabilize and regulate voltage.
- **DC-DC Converters:** Used in DC-DC converter circuits to convert between different voltage levels.
- **Motor Control:** Can be used in medium power motor control circuits to regulate and control the speed of the motor.
If you need more detailed information or additional help, please let me know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
