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05N03LA-VB TO263 Product details
Back to previous pageProduct introduction：
The following is the detailed information of VBsemi's MOSFET product 05N03LA-VB:
1. Product Introduction:
05N03LA-VB is a single-N-Channel MOSFET manufactured using Trench technology, suitable for circuit design in various fields and modules. Its main features include 30V drain-source voltage (VDS), 20V gate-source voltage (VGS), 1.7V threshold voltage (Vth), 2.7mΩ@VGS=4.5V and 2.4mΩ@VGS=10V on-resistance (RDS(ON)), and 98A drain current (ID).
1. Product Introduction:
05N03LA-VB is a single-N-Channel MOSFET manufactured using Trench technology, suitable for circuit design in various fields and modules. Its main features include 30V drain-source voltage (VDS), 20V gate-source voltage (VGS), 1.7V threshold voltage (Vth), 2.7mΩ@VGS=4.5V and 2.4mΩ@VGS=10V on-resistance (RDS(ON)), and 98A drain current (ID).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | 2.7mΩ | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
2. Parameter description:
- Model: 05N03LA-VB
- Package: TO263
- Polarity: N-channel
- Drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 1.7V
- On-resistance (RDS(ON)): 2.7mΩ@VGS=4.5V, 2.4mΩ@VGS=10V
- Drain current (ID): 98A
- Technology: Trench
- Model: 05N03LA-VB
- Package: TO263
- Polarity: N-channel
- Drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 1.7V
- On-resistance (RDS(ON)): 2.7mΩ@VGS=4.5V, 2.4mΩ@VGS=10V
- Drain current (ID): 98A
- Technology: Trench
Domain and module applications：
3. Application examples:
05N03LA-VB is suitable for a variety of fields and modules, such as:
- Power management: Suitable for low voltage and high current power switches and regulators, providing efficient energy conversion.
- Motor drive: Used for motor control in power tools, household appliances and industrial machinery, with high efficiency and high reliability.
- Automotive electronics: Suitable for power management and drive control in automotive electronic systems to improve vehicle performance and energy efficiency.
- Industrial control: Used in fields such as industrial automation and robot control to meet high power and high frequency requirements.
The above is the detailed information of the 05N03LA-VB TO263 MOSFET product and examples of its applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
