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05CN10N-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 05CN10N-VB is a single-channel N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, positive and negative) of 20V, and a threshold voltage (Vth) of 3V. The device uses a trench process and has a low on-resistance of 4mΩ RDS(ON) at VGS=10V. Its maximum drain current (ID) is 140A.
VBsemi's 05CN10N-VB is a single-channel N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 100V, a gate-source voltage (VGS, positive and negative) of 20V, and a threshold voltage (Vth) of 3V. The device uses a trench process and has a low on-resistance of 4mΩ RDS(ON) at VGS=10V. Its maximum drain current (ID) is 140A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description:
- **Device Type**: Single Channel N-Channel MOSFET
- **Package**: TO263
- **VDS (Drain-Source Voltage)**: 100V
- **VGS (Gate-Source Voltage)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 140A
- **Process**: Channel
- **Device Type**: Single Channel N-Channel MOSFET
- **Package**: TO263
- **VDS (Drain-Source Voltage)**: 100V
- **VGS (Gate-Source Voltage)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 140A
- **Process**: Channel
Domain and module applications：
### Applicable fields and module examples:
1. **Power management module**: Due to its higher drain voltage and low on-resistance, 05CN10N-VB is suitable for power management modules such as switching power supplies and DC-DC converters to provide efficient power control.
2. **Electric vehicle charging pile module**: In electric vehicle charging piles, this MOSFET can be used to control the power output of the charging pile to achieve efficient and safe electric vehicle charging.
3. **Industrial control module**: In industrial control systems, 05CN10N-VB can be used to control various motors and devices to provide efficient power management and control.
4. **Power switch module**: As a power switch device, this MOSFET can be used in various power switch applications such as switching power supplies and power management systems to achieve efficient power control and management.
The above is a product introduction, detailed parameter description, and examples of applicable fields and modules for 05CN10N-VB.
1. **Power management module**: Due to its higher drain voltage and low on-resistance, 05CN10N-VB is suitable for power management modules such as switching power supplies and DC-DC converters to provide efficient power control.
2. **Electric vehicle charging pile module**: In electric vehicle charging piles, this MOSFET can be used to control the power output of the charging pile to achieve efficient and safe electric vehicle charging.
3. **Industrial control module**: In industrial control systems, 05CN10N-VB can be used to control various motors and devices to provide efficient power management and control.
4. **Power switch module**: As a power switch device, this MOSFET can be used in various power switch applications such as switching power supplies and power management systems to achieve efficient power control and management.
The above is a product introduction, detailed parameter description, and examples of applicable fields and modules for 05CN10N-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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