05CN10N-VB TO263 Product details

### 1. Product Introduction
VBsemi's 05CN10N-VB is a single-channel N-channel MOSFET using trench technology, suitable for 100V high-voltage working environment. It has low on-resistance and high current carrying capacity, suitable for use in circuits requiring high efficiency and low power consumption.
### 2. Parameter Description
- **Package**: TO263
- **VDS**: 100V
- **VGS**: 20V (±)
- **Threshold Voltage**: 3V
- **On-resistance**: 4mΩ @ VGS=10V
- **Maximum Current**: 140A
### 3. Application Fields and Module Examples
- **Power Management Module**: 05CN10N-VB is suitable for power management modules that require high power density and high efficiency. For example, it can be used in server power supply, communication equipment power supply and other fields to provide efficient power conversion and regulation.
- **Electric Vehicle Drive**: In electric vehicle drives, this MOSFET can be used to control motors, achieve high efficiency and high current carrying capacity, and improve the performance of the overall drive system.
- **Industrial Automation**: This MOSFET is also suitable for industrial automation fields, such as motor drives, industrial control equipment, etc., to achieve high power density and high efficiency control solutions, and provide stable and efficient power control for complex industrial systems.

These examples illustrate the applicability of 05CN10N-VB in a variety of fields and modules, demonstrating its value and application potential in high-power, high-efficiency circuits.