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057N08N-VB TO262 Product details
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**Product Introduction:**
VBsemi's 057N08N-VB is a single N-channel power MOSFET using trench technology, suitable for a variety of applications. The device features low on-resistance, high drain current and low gate voltage, and is suitable for applications requiring high efficiency and high voltage power supplies, DC-DC converters, motor control, etc.
VBsemi's 057N08N-VB is a single N-channel power MOSFET using trench technology, suitable for a variety of applications. The device features low on-resistance, high drain current and low gate voltage, and is suitable for applications requiring high efficiency and high voltage power supplies, DC-DC converters, motor control, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 80V | 3V | 85A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N-Channel |
**Detailed parameter description:**
- **Model:** 057N08N-VB
- **Package:** TO262
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** 20V (±)
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 10mΩ @ VGS=4.5V; 6mΩ @ VGS=10V
- **Drain current (ID):** 85A
- **Technology:** Trench technology
- **Model:** 057N08N-VB
- **Package:** TO262
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** 20V (±)
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 10mΩ @ VGS=4.5V; 6mΩ @ VGS=10V
- **Drain current (ID):** 85A
- **Technology:** Trench technology
Domain and module applications：
**Application Examples:**
- **Power Supplies:** This MOSFET can be used in high voltage switch mode power supplies to stabilize and regulate voltage.
- **DC-DC Converters:** Used in DC-DC converter circuits to achieve efficient conversion between different voltage levels.
- **Motor Control:** Can be used in motor control circuits that require high voltage to regulate and control the speed of the motor.
If you need more detailed information or additional help, please let me know!
- **Power Supplies:** This MOSFET can be used in high voltage switch mode power supplies to stabilize and regulate voltage.
- **DC-DC Converters:** Used in DC-DC converter circuits to achieve efficient conversion between different voltage levels.
- **Motor Control:** Can be used in motor control circuits that require high voltage to regulate and control the speed of the motor.
If you need more detailed information or additional help, please let me know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
