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051NE8N-VB Product details
Back to previous pageProduct introduction：
### Product Introduction:
VBsemi's 051NE8N-VB is a single-channel N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, positive and negative) of 20V, and a threshold voltage (Vth) of 3V. The device uses a trench process and has a low on-resistance of 10mΩ RDS(ON) at VGS=4.5V and 6mΩ RDS(ON) at VGS=10V. Its maximum drain current (ID) is 120A.
VBsemi's 051NE8N-VB is a single-channel N-channel MOSFET in a TO263 package with a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, positive and negative) of 20V, and a threshold voltage (Vth) of 3V. The device uses a trench process and has a low on-resistance of 10mΩ RDS(ON) at VGS=4.5V and 6mΩ RDS(ON) at VGS=10V. Its maximum drain current (ID) is 120A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter Description:
- **Device Type**: Single Channel N-Channel MOSFET
- **Package**: TO263
- **VDS (Drain-Source Voltage)**: 80V
- **VGS (Gate-Source Voltage)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 120A
- **Process**: Channel
- **Device Type**: Single Channel N-Channel MOSFET
- **Package**: TO263
- **VDS (Drain-Source Voltage)**: 80V
- **VGS (Gate-Source Voltage)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 10mΩ @ VGS=4.5V, 6mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 120A
- **Process**: Channel
Domain and module applications：
### Applicable fields and module examples:
1. **Power management module**: Due to its low on-resistance and high drain current, 051NE8N-VB is suitable for power management modules such as switching power supplies and DC-DC converters, providing efficient power control.
2. **Battery management module**: In the battery management system, this MOSFET can be used to control the charging and discharging process of the battery to achieve efficient power management and protection.
3. **Motor drive module**: In motor control, this MOSFET can be used to drive DC motors such as brushless DC motors, providing efficient power conversion and motor control.
4. **LED lighting module**: In LED lighting applications, 052N03LS-VB can be used for switching power supplies, controlling the brightness and current of LEDs, achieving energy saving and dimmable effects.
The above is a product introduction, detailed parameter description, and examples of applicable fields and modules for 051NE8N-VB.
1. **Power management module**: Due to its low on-resistance and high drain current, 051NE8N-VB is suitable for power management modules such as switching power supplies and DC-DC converters, providing efficient power control.
2. **Battery management module**: In the battery management system, this MOSFET can be used to control the charging and discharging process of the battery to achieve efficient power management and protection.
3. **Motor drive module**: In motor control, this MOSFET can be used to drive DC motors such as brushless DC motors, providing efficient power conversion and motor control.
4. **LED lighting module**: In LED lighting applications, 052N03LS-VB can be used for switching power supplies, controlling the brightness and current of LEDs, achieving energy saving and dimmable effects.
The above is a product introduction, detailed parameter description, and examples of applicable fields and modules for 051NE8N-VB.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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