04N80C3-VB TO252 Product details

### Product Introduction:

VBsemi's 050N03LS-VB is a single-channel N-channel MOSFET in a DFN8 (5X6) package with a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS, positive and negative) of 20V, and a threshold voltage (Vth) of 1.7V. The device uses a trench process and has a low on-resistance of 5mΩ RDS(ON) at VGS=4.5V and 3mΩ RDS(ON) at VGS=10V. Its maximum drain current (ID) is 120A.

### Parameter description:

- **Device type**: Single-channel N-channel MOSFET
- **Package**: DFN8(5X6)
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=4.5V, 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Process**: Channel

### Applicable fields and module examples:

1. **Power management module**: Due to its low on-resistance and high drain current, 050N03LS-VB is suitable for power management modules such as switching power supplies and DC-DC converters, providing efficient power control.
2. **Battery management module**: In the battery management system, this MOSFET can be used to control the charging and discharging process of the battery to achieve efficient power management and protection.
3. **Motor drive module**: In motor control, this MOSFET can be used to drive DC motors such as brushless DC motors, providing efficient power conversion and motor control.
4. **LED lighting module**: In LED lighting applications, 050N03LS-VB can be used for switching power supplies, controlling the brightness and current of LEDs, achieving energy saving and dimmable effects.

The above is a product introduction, detailed parameter description, and examples of applicable fields and modules for 050N03LS-VB.