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04N80C3-VB TO220F Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
VBsemi's 04N80C3-VB is a single-channel N-channel MOSFET that uses SJ_Multi-EPI technology and is suitable for high-voltage working environments up to 850V. It has a high threshold voltage and on-resistance, suitable for use in circuits that need to withstand high voltages and low power losses.
VBsemi's 04N80C3-VB is a single-channel N-channel MOSFET that uses SJ_Multi-EPI technology and is suitable for high-voltage working environments up to 850V. It has a high threshold voltage and on-resistance, suitable for use in circuits that need to withstand high voltages and low power losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### 2. Parameter description
- **Package**: TO220F
- **VDS**: 850V
- **VGS**: 30V (±)
- **Threshold voltage**: 3.3V
- **On-resistance**: 1150mΩ @ VGS=10V
- **Maximum current**: 10A
- **Package**: TO220F
- **VDS**: 850V
- **VGS**: 30V (±)
- **Threshold voltage**: 3.3V
- **On-resistance**: 1150mΩ @ VGS=10V
- **Maximum current**: 10A
Domain and module applications：
### 3. Application fields and module examples
- **Power management module**: Due to its high withstand voltage characteristics and moderate current carrying capacity, the 04N80C3-VB is suitable for the switching part of the switching power supply. For example, it can be used in power management modules such as inverters and power converters.
- **Lighting application**: In LED lighting drivers that require high withstand voltage, the 04N80C3-VB can be used as a switching device to achieve high-efficiency lighting control.
- **Electric vehicle charger**: This MOSFET can also be used in electric vehicle chargers to achieve high-efficiency and high-voltage charging solutions.
These examples illustrate the applicability of the 04N80C3-VB in high-voltage, low-power loss circuits, showing its wide application potential in a variety of fields and modules.
- **Power management module**: Due to its high withstand voltage characteristics and moderate current carrying capacity, the 04N80C3-VB is suitable for the switching part of the switching power supply. For example, it can be used in power management modules such as inverters and power converters.
- **Lighting application**: In LED lighting drivers that require high withstand voltage, the 04N80C3-VB can be used as a switching device to achieve high-efficiency lighting control.
- **Electric vehicle charger**: This MOSFET can also be used in electric vehicle chargers to achieve high-efficiency and high-voltage charging solutions.
These examples illustrate the applicability of the 04N80C3-VB in high-voltage, low-power loss circuits, showing its wide application potential in a variety of fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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