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VBMB18R06SE Product details

Product introduction:

Product introduction:
VBsemi's VBMB18R06SE is a single N-channel field effect transistor product with a drain-source voltage (VDS) of 800V, a drain current (ID) of 6A, and uses SJ_Deep-Trench technology. This product is packaged as TO220F and is suitable for various applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 800V 30(±V) 3.5V 6A 750(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 750m次
- Drain current (ID): 6A
- Technology: SJ_Deep-Trench

Domain and module applications:

Examples of applicable fields and modules:
1. Industrial power module: Due to its high drain-source voltage and drain current, VBMB18R06SE is suitable for industrial power modules and can provide stable and reliable power output.
2. Automotive electronic module: In the field of automotive electronics, this product can be used in the electric drive system of electric vehicles, such as the motor control unit (MCU) of electric vehicles, etc.
3. Solar inverter: Due to its high withstand voltage and current parameters, VBMB18R06SE can also be used in solar inverter modules to achieve conversion and output of solar energy.
4. LED lighting driver: In the field of LED lighting, this product can be used in LED driver circuits to provide stable current output and realize brightness adjustment and control of LED lighting equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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