VBMB18R06SE Product details
Product introduction:
VBsemi's VBMB18R06SE is a single N-channel field effect transistor product with a drain-source voltage (VDS) of 800V, a drain current (ID) of 6A, and uses SJ_Deep-Trench technology. This product is packaged as TO220F and is suitable for various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 30(±V) | 3.5V | 6A | 750(mΩ) | SJ_Deep-Trench |
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 750m次
- Drain current (ID): 6A
- Technology: SJ_Deep-Trench
Domain and module applications:
1. Industrial power module: Due to its high drain-source voltage and drain current, VBMB18R06SE is suitable for industrial power modules and can provide stable and reliable power output.
2. Automotive electronic module: In the field of automotive electronics, this product can be used in the electric drive system of electric vehicles, such as the motor control unit (MCU) of electric vehicles, etc.
3. Solar inverter: Due to its high withstand voltage and current parameters, VBMB18R06SE can also be used in solar inverter modules to achieve conversion and output of solar energy.
4. LED lighting driver: In the field of LED lighting, this product can be used in LED driver circuits to provide stable current output and realize brightness adjustment and control of LED lighting equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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