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04N60-VB TO220F Product details
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### Product Introduction:
VBsemi's 04N60-VB is a single N-channel field effect transistor (MOSFET) in a TO220F package. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, positive and negative values) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 2560mΩ@VGS=10V, and a drain current (ID) of 4A. It uses a planar process (Plannar Technology) and has good performance and reliability under high voltage.
VBsemi's 04N60-VB is a single N-channel field effect transistor (MOSFET) in a TO220F package. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS, positive and negative values) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 2560mΩ@VGS=10V, and a drain current (ID) of 4A. It uses a planar process (Plannar Technology) and has good performance and reliability under high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
### Parameter description:
- Package: TO220F
- Type: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ±30V
- Threshold voltage (Vth): 3.5V
- RDS(ON): 2560mΩ@VGS=10V
- ID (drain current): 4A
- Process: planar process
- Package: TO220F
- Type: Single N-channel
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ±30V
- Threshold voltage (Vth): 3.5V
- RDS(ON): 2560mΩ@VGS=10V
- ID (drain current): 4A
- Process: planar process
Domain and module applications：
### Applicable fields and modules:
- Power switch module: Due to its high voltage and low on-resistance characteristics, 04N60-VB is suitable for power switch modules such as switching power supplies, UPS systems and inverters.
- Lighting driver module: In LED lighting systems that require high voltage drive and stable performance, this device is also an ideal choice.
- Industrial electronics: In the field of industrial control and automation, due to its high voltage and high current resistance, 04N60-VB is often used in high-voltage switches and control modules.
- Electric vehicle charging pile: In electric vehicle charging piles, due to its high voltage and low on-resistance characteristics, 04N60-VB can provide reliable power switch control.
- Power switch module: Due to its high voltage and low on-resistance characteristics, 04N60-VB is suitable for power switch modules such as switching power supplies, UPS systems and inverters.
- Lighting driver module: In LED lighting systems that require high voltage drive and stable performance, this device is also an ideal choice.
- Industrial electronics: In the field of industrial control and automation, due to its high voltage and high current resistance, 04N60-VB is often used in high-voltage switches and control modules.
- Electric vehicle charging pile: In electric vehicle charging piles, due to its high voltage and low on-resistance characteristics, 04N60-VB can provide reliable power switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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