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04N60I-VB Product details
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**Product Introduction: **
VBsemi's 04N60I-VB is a single N-channel power MOSFET using planar technology, suitable for a variety of applications. The device features high drain voltage, low on-resistance and low gate voltage, and is suitable for applications such as power supplies, DC-DC converters, motor control, etc. that require high efficiency and high voltage.
VBsemi's 04N60I-VB is a single N-channel power MOSFET using planar technology, suitable for a variety of applications. The device features high drain voltage, low on-resistance and low gate voltage, and is suitable for applications such as power supplies, DC-DC converters, motor control, etc. that require high efficiency and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N-Channel |
**Detailed parameter description: **
- **Model: ** 04N60I-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 2560mΩ @ VGS=10V
- **Drain current (ID): ** 4A
- **Technology: ** Planar technology
- **Model: ** 04N60I-VB
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** 30V (±)
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 2560mΩ @ VGS=10V
- **Drain current (ID): ** 4A
- **Technology: ** Planar technology
Domain and module applications：
**Application Examples:**
- **Power Supplies:** This MOSFET can be used in high voltage power supplies to stabilize and regulate voltage.
- **DC-DC Converters:** Used in DC-DC converter circuits to achieve efficient conversion between different voltage levels.
- **Motor Control:** Can be used in motor control circuits that require high voltage to regulate and control the speed of the motor.
If you need more detailed information or additional help, please let me know!
- **Power Supplies:** This MOSFET can be used in high voltage power supplies to stabilize and regulate voltage.
- **DC-DC Converters:** Used in DC-DC converter circuits to achieve efficient conversion between different voltage levels.
- **Motor Control:** Can be used in motor control circuits that require high voltage to regulate and control the speed of the motor.
If you need more detailed information or additional help, please let me know!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
