Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N-Channel |
30V |
|
1.7V |
120A |
|
4mΩ |
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N-Channel |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N-Channel |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N-Channel |
|
|
|
|
|
|
|
2. Parameter description:
- VDS: 30V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 1.7V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 1.7V, the MOSFET starts to turn on.
- RDS(ON): 4mΩ at VGS=4.5V and 3mΩ at VGS=10V, which means that the static drain-source resistance of the MOSFET is different at different gate voltages.
- ID: 120A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
Domain and module applications：
3. Application fields and module examples:
- Power modules: Due to its low drain-source resistance and high drain current capability, 04N03LB-VB is suitable for high-performance power modules such as high-end computer power supplies and industrial power supplies.
- Battery Management System (BMS): It can be used for battery charge and discharge management, and is suitable for large-capacity battery packs due to its high drain current capability.
- Motor drive: Due to its low on-resistance and high drain current capability, it is suitable for DC motor drives, providing high efficiency and high performance.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
