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04CNE8N-VB Product details
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### Product Introduction:
VBsemi's 04CNE8N-VB is a single N-channel field effect transistor (MOSFET) in a TO263 package. The device has a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, positive and negative) of 20V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 10mΩ@VGS=4.5V and 6mΩ@VGS=10V, and a drain current (ID) of 120A. It uses trench technology and has good performance and reliability under high voltage.
VBsemi's 04CNE8N-VB is a single N-channel field effect transistor (MOSFET) in a TO263 package. The device has a drain-source voltage (VDS) of 80V, a gate-source voltage (VGS, positive and negative) of 20V, a threshold voltage (Vth) of 3V, an on-resistance (RDS(ON)) of 10mΩ@VGS=4.5V and 6mΩ@VGS=10V, and a drain current (ID) of 120A. It uses trench technology and has good performance and reliability under high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | 10mΩ | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
### Parameter description:
- Package: TO263
- Type: Single N-channel
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): ±20V
- Threshold voltage (Vth): 3V
- RDS(ON): 10mΩ@VGS=4.5V, 6mΩ@VGS=10V
- ID (drain current): 120A
- Process: Trench process
- Package: TO263
- Type: Single N-channel
- VDS (drain-source voltage): 80V
- VGS (gate-source voltage): ±20V
- Threshold voltage (Vth): 3V
- RDS(ON): 10mΩ@VGS=4.5V, 6mΩ@VGS=10V
- ID (drain current): 120A
- Process: Trench process
Domain and module applications：
### Applicable fields and modules:
- Power management module: Due to its lower on-resistance and higher drain current, 04CNE8N-VB is suitable for power management modules such as DC-DC converters and switching regulators.
- Motor drive module: In motor drive modules that require high current output, 04CNE8N-VB can provide reliable power switch control.
- Automotive electronics: In the field of automotive electronics, due to its high temperature resistance, high voltage and high current characteristics, 04CNE8N-VB is often used in modules such as automotive engine control units (ECUs), lighting systems and motor controllers.
- Industrial control: In industrial control systems that require high power switch control, 04CNE8N-VB can provide reliable performance.
- Power management module: Due to its lower on-resistance and higher drain current, 04CNE8N-VB is suitable for power management modules such as DC-DC converters and switching regulators.
- Motor drive module: In motor drive modules that require high current output, 04CNE8N-VB can provide reliable power switch control.
- Automotive electronics: In the field of automotive electronics, due to its high temperature resistance, high voltage and high current characteristics, 04CNE8N-VB is often used in modules such as automotive engine control units (ECUs), lighting systems and motor controllers.
- Industrial control: In industrial control systems that require high power switch control, 04CNE8N-VB can provide reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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