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04CN10N-VB TO263 Product details
Back to previous pageProduct introduction：
The following is the detailed information of VBsemi's MOSFET product 04CN10N-VB:
1. Product Introduction:
04CN10N-VB is a single-N-Channel MOSFET manufactured using Trench technology, suitable for circuit design in various fields and modules. Its main features include 100V drain-source voltage (VDS), 20V gate-source voltage (VGS), 3V threshold voltage (Vth), 4mΩ@VGS=10V on-resistance (RDS(ON)), and 140A drain current (ID).
1. Product Introduction:
04CN10N-VB is a single-N-Channel MOSFET manufactured using Trench technology, suitable for circuit design in various fields and modules. Its main features include 100V drain-source voltage (VDS), 20V gate-source voltage (VGS), 3V threshold voltage (Vth), 4mΩ@VGS=10V on-resistance (RDS(ON)), and 140A drain current (ID).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
2. Parameter description:
- Model: 04CN10N-VB
- Package: TO263
- Polarity: N-channel
- Drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)) 4mΩ@VGS=10V
- Drain current (ID): 140A
- Technology: Trench
- Model: 04CN10N-VB
- Package: TO263
- Polarity: N-channel
- Drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ±20V
- Threshold voltage (Vth): 3V
- On-resistance (RDS(ON)) 4mΩ@VGS=10V
- Drain current (ID): 140A
- Technology: Trench
Domain and module applications：
3. Application examples:
04CN10N-VB is suitable for a variety of fields and modules, such as:
- Power management: Suitable for high voltage and high current power switches and regulators.
- Motor drive: Used for motor control of high-performance power tools, electric vehicles and industrial machinery.
- Automotive electronics: Suitable for power management and drive control in automotive electronic systems.
- Industrial control: Used in industrial automation and robot control.
The above is the detailed information of the 04CN10N-VB MOSFET product and examples of its applicable fields and modules.
04CN10N-VB is suitable for a variety of fields and modules, such as:
- Power management: Suitable for high voltage and high current power switches and regulators.
- Motor drive: Used for motor control of high-performance power tools, electric vehicles and industrial machinery.
- Automotive electronics: Suitable for power management and drive control in automotive electronic systems.
- Industrial control: Used in industrial automation and robot control.
The above is the detailed information of the 04CN10N-VB MOSFET product and examples of its applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
