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048N06L-VB Product details
Back to previous pageProduct introduction：
Below is the detailed information about VBsemi's MOSFET product 048N06L-VB:
1. Product Introduction:
- Model: 048N06L-VB
- Package: TO263
- Construction: Single N-channel
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): 20V (±)
- Threshold voltage (Vth): 3V
- Static drain-source resistance (RDS(ON)): 4mΩ at VGS=10V
- Continuous drain current (ID): 150A
- Process: Trench
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N-Channel |
2. Parameter description:
- VDS: 60V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 3V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 3V, the MOSFET starts to turn on.
- RDS(ON): 4mΩ@VGS=10V means that when the gate voltage is 10V, the static drain-source resistance of the MOSFET is 4mΩ, which determines the resistance size of the MOSFET when it is turned on.
- ID: 150A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
- VDS: 60V is the maximum drain-source voltage of the MOSFET. Exceeding this voltage may cause device damage.
- VGS: 20V (±) is the maximum gate-source voltage range of the MOSFET. Exceeding this range may cause device damage.
- Vth: 3V is the threshold voltage of the MOSFET, that is, when the gate voltage is higher than 3V, the MOSFET starts to turn on.
- RDS(ON): 4mΩ@VGS=10V means that when the gate voltage is 10V, the static drain-source resistance of the MOSFET is 4mΩ, which determines the resistance size of the MOSFET when it is turned on.
- ID: 150A is the maximum continuous drain current of the MOSFET. Exceeding this current may cause the device to overheat and be damaged.
Domain and module applications：
3. Application fields and module examples:
- Power modules: Due to its low drain-source resistance and high drain current capability, the 048N06L-VB is suitable for high-performance power modules such as high-end computer power supplies and industrial power supplies.
- Electric vehicle (EV) drive modules: Due to its high voltage and current capabilities, it can be used in motor controllers in electric vehicles, providing high efficiency and high performance.
- Lighting applications: It can be used in LED lighting drivers, which can provide higher efficiency and lower heat dissipation due to its low on-resistance.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
- Power modules: Due to its low drain-source resistance and high drain current capability, the 048N06L-VB is suitable for high-performance power modules such as high-end computer power supplies and industrial power supplies.
- Electric vehicle (EV) drive modules: Due to its high voltage and current capabilities, it can be used in motor controllers in electric vehicles, providing high efficiency and high performance.
- Lighting applications: It can be used in LED lighting drivers, which can provide higher efficiency and lower heat dissipation due to its low on-resistance.
Please note that the above examples are only used to illustrate the possible application fields and modules of this MOSFET, and the actual application needs to be evaluated according to specific design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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