VBMB185R05 Product details
Product introduction:
VBsemi's VBMB185R05 model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 850V, a drain current (ID) of 5A, and a threshold voltage (Vth) of 3.5V. It adopts Plannar technology and is packaged as TO220F. This MOSFET is suitable for high voltage and high power applications and has low on-resistance and high drain current tolerance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 850V | 30(±V) | 3.5V | 5A | 2200 (mΩ) | Plannar |
- Product model: VBMB185R05
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 850V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2200
- Maximum drain current (ID): 5A
- Technology: Plannar
-Package: TO220F
Domain and module applications:
1. Power management module: VBMB185R05 can be used for switching power supply in power management module to achieve stable voltage output and current control.
2. Lighting driver: In LED lighting drivers, high-performance power switching devices are required to control current and brightness. VBMB185R05 can be used as a switching element to provide reliable driving functions.
3. Power tools: In power tools, power devices need to withstand high voltage and high current. VBMB185R05 can be used in power control and drive circuits of power tools.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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