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VBMB17R20S Product details

Product introduction:

Product introduction: VBsemi's VBMB17R20S is a single N-channel MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology, with TO220F package, suitable for a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 700V 30(±V) 3.5V 20A 160(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 700V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 160m次, and the maximum drain current is 20A.

Domain and module applications:

Examples of applicable fields and modules:
1. Power inverter: VBMB17R20S can be used as a power switch module in a power inverter to achieve efficient energy conversion and is widely used in industrial and household power systems.
2. High-frequency power amplifier: Due to its low on-resistance, this product is suitable for high-frequency power amplifiers used in communications, radar, medical equipment and other fields.
3. New energy vehicle charging piles: In new energy vehicle charging piles, VBMB17R20S can be used in power conversion modules to ensure efficient and safe battery charging.

The above is an introduction to VBsemi's VBMB17R20S product, detailed parameter descriptions, and examples of applicable fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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