Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220F |
Single-N |
700V |
30（±V） |
3.5V |
7A |
|
|
680(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBMB17R07SE
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 680m次
- Maximum drain current (ID): 7A
- Technology: SJ_Deep-Trench
-Package: TO220F
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: VBMB17R07SE can be used in switching power supplies and inverters in industrial power modules to ensure high efficiency and stable performance.
2. Automotive electronic systems: This product is suitable for drivers and power management modules in automotive electronic systems, providing reliable power control and protection functions.
3. Solar inverter: VBMB17R07SE can be used in solar inverters to convert DC power generated by solar panels into AC power to achieve high-efficiency conversion of solar power generation systems.
4. LED lighting system: In LED lighting systems, this product can be used in LED drive circuits and power management modules to provide stable current and power control to ensure the reliability and long life of LED lamps.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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