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VBMB16R41SFD Product details

Product introduction:

1. Product introduction:
VBMB16R41SFD is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30(±V) 3.5V 41A 62(mΩ) SJ_Multi-EPI

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 62m次
- Maximum drain current (ID): 41A
- Technology: SJ_Multi-EPI

Domain and module applications:

Application example:
- Power module: Since VBMB16R41SFD has a high drain-source voltage and a large drain current, it is suitable for high-voltage power modules such as switching power supplies and inverters.
- Electric vehicle charging piles: The device's high voltage and high current characteristics make it ideal for power switches and inverters in electric vehicle charging piles.
- Industrial electronics: In industrial electronic equipment, the VBMB16R41SFD can be used to drive high-power motors and perform other high-power applications.
- Solar inverter: Due to its high performance and voltage resistance characteristics, this device can be used in solar inverters to convert DC power generated by solar panels into AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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