VBMB16R34SFD Product details
Product introduction:
VBMB16R34SFD is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 30(±V) | 3.5V | 34A | 80(mΩ) | SJ_Multi-EPI |
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 80m次
- Maximum drain current (ID): 34A
- Technology: SJ_Multi-EPI
Domain and module applications:
- Power module: Since VBMB16R34SFD has a high drain-source voltage and a large drain current, it is suitable for various power modules, such as switching power supplies, inverters and frequency converters.
- Automotive Electronics: The device can be used in applications such as motor control, battery management and power switching in automotive electronic systems.
- Industrial automation: In the field of industrial automation, VBMB16R34SFD can be used to control high-power equipment and perform industrial automation tasks.
- LED lighting: As a key component of the LED drive circuit, this device can be used in LED lighting systems to provide efficient power switching and dimming functions.
Technical support:
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