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VBMB16R34SFD Product details

Product introduction:

Product introduction:
VBMB16R34SFD is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220F.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 600V 30(±V) 3.5V 34A 80(mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 80m次
- Maximum drain current (ID): 34A
- Technology: SJ_Multi-EPI

Domain and module applications:

Application example:
- Power module: Since VBMB16R34SFD has a high drain-source voltage and a large drain current, it is suitable for various power modules, such as switching power supplies, inverters and frequency converters.
- Automotive Electronics: The device can be used in applications such as motor control, battery management and power switching in automotive electronic systems.
- Industrial automation: In the field of industrial automation, VBMB16R34SFD can be used to control high-power equipment and perform industrial automation tasks.
- LED lighting: As a key component of the LED drive circuit, this device can be used in LED lighting systems to provide efficient power switching and dimming functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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